ITO Sputtering Targets

Indium tin oxide (ITO) is a solid solution of indium oxide (In2O3) and tin oxide (SnO2), typically 90% In2O3, 10% SnO2 by weight.ITO is one of the most widely used transparent conductive oxides because of its electrical conductivity and optical transparency. Indium tin oxide films are most often deposited on surfaces by physical vapor deposition (PVD). 

DESCRIPTION

ITO Sputtering Targets

Indium tin oxide (ITO) is a solid solution of indium oxide (In2O3) and tin oxide (SnO2), typically 90% In2O3, 10% SnO2 by weight.ITO is one of the most widely used transparent conductive oxides because of its electrical conductivity and optical transparency. Indium tin oxide films are most often deposited on surfaces by physical vapor deposition (PVD). 

Common Uses for ITO Films

ITO is commonly used in the manufacture of transparent conductive coatings for displays such as LCDs, flat panel displays, plasma displays, touchscreens and e-ink applications.ITO films are used in organic light-emitting diodes (OLEDs), solar cells, antistatic coatings, and EMI shielding, where ITO is used as the anode in OLEDs.

In addition, ITO is used in a variety of optical coatings, most notably infrared reflective coatings (hot mirrors) for automobiles and sodium vapor lamp glass.

ITO film strain gauges can operate at temperatures up to 1400°C and are used in harsh environments such as gas turbines, jet engines and rocket engines.

ITO Sputtering Targets

Typical properties of ITO in thin film form

ITO films are typically highly transparent, with a visible light transmission of about 80-90%. 140-180 nm ITO films typically have a sheet resistance of 10-20 ohm/square, and this value decreases with increasing film thickness and vice versa. In addition, the optical and electrical properties of ITO films can be tuned by changing the composition of the sputtering target. For example, In-SnO2 targets typically produce films with higher transparency and lower sheet resistance than In2O3-SnO2 targets.

Typical deposition conditions for sputtered ITO films

ITO films can be deposited by sputtering with a wide range of deposition parameters. Typically, the sputtering pressure is set between 0.1 and 1 mTorr and the sputtering power is set between 0.5 and 2 kW. The deposition temperature is generally kept between room temperature and 300°C, and the deposition rate is generally about 0.5-2 nm/s.

According to the chemical components, the ceramic targets can be divided into: Oxide-ceramic targets, Silicide-ceramic targets, Nitride-ceramic targets, Fluoride-ceramic targets and Sulfide-ceramic targets. Our ceramic targets(including AZO, ITO, GZO, Si, SiAl, TiOx, ZnS, CdS, WC) are widely used in microelectronic semiconductor integrated circuits, thin film hybrid integrated circuits and chip components especially CD, disk and LCD flat panel display.

We can supply ceramic targets with excellent purity, high density and fine-grained microstructure.

RELATED PRODUCTS